Storage Capacity: 8GB
Memory Technology: DDR4 SDRAM
Number Of Modules: 1 x 8GB
Bus Speed: 2666MHZ DDR4-21300/PC4-2666
Data Integrity Check: ECC
Signal Processing: Registered
Cas Latency Timings: CL19
Rank Features: Single Rank X4
Form Factor: 288-PIN RDIMM
Voltage: 1.2V
DIMM Type: Unbuffered
Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.
Exceptional speed, high reliability and low energy consumption.
High-performing memory empowers faster, powerful solutions. Samsung DDR4 delivers top speed with better bandwidth and reliability using less energy.
Less energy, greater efficiency.
Samsung’s industry-first 1x nm process technology enables DDR4 to consume less power while boosting performance, reducing TCO. The 1.2V low operating voltage and Pseudo Open Drain (POD) interface enables lower power consumption, using 25% less energy.
Manufacturer | Samsung |
Storage Capacity | 8GB |
Memory Technology | DDR4 SDRAM |
Number Of Modules | 1 x 8GB |
Bus Speed | 2666MHZ DDR4-21300/PC4-2666 |
Data Integrity Check | ECC |
Signal Processing | Registered |
Cas Latency Timings | CL19 |
Rank Features | Single Rank X4 |
Form Factor | 288-PIN RDIMM |
Voltage | 1.2V |
DIMM Type | Unbuffered |